Please use this identifier to cite or link to this item: http://buratest.brunel.ac.uk/handle/2438/8114
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dc.contributor.authorChaure, NB-
dc.contributor.authorCammidge, AN-
dc.contributor.authorChambrier, I-
dc.contributor.authorCook, MJ-
dc.contributor.authorCain, MG-
dc.contributor.authorMurphy, CE-
dc.contributor.authorPal, C-
dc.contributor.authorRay, AK-
dc.date.accessioned2014-03-04T14:36:12Z-
dc.date.available2014-03-04T14:36:12Z-
dc.date.issued2011-
dc.identifier.citationScience and Technology of Advanced Materials, 12(2), Article 025001, 2011en_US
dc.identifier.issn1468-6996-
dc.identifier.urihttp://iopscience.iop.org/1468-6996/12/2/025001en
dc.identifier.urihttp://bura.brunel.ac.uk/handle/2438/8114-
dc.description© 2011 National Institute for Materials Scienceen_US
dc.description.abstractSolution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10−2 cm2 V−1 s−1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3V for untreated devices to −2V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.en_US
dc.description.sponsorshipTechnology Strategy Board, UK (Project No: TP/6/EPH/6/S/K2536J).en_US
dc.languageEnglish-
dc.language.isoenen_US
dc.publisherNational Institute for Materials Scienceen_US
dc.subjectSubstituted copper phthalocyanineen_US
dc.subjectOrganic thin film transistoren_US
dc.subjectSurface treatmenten_US
dc.subjectAFMen_US
dc.subjectTopologyen_US
dc.subjectField effect mobilityen_US
dc.titleHigh-mobility solution-processed copper phthalocyanine-based organic field-effect transistorsen_US
dc.typeArticleen_US
dc.identifier.doihttp://dx.doi.org/10.1088/1468-6996/12/2/025001-
pubs.organisational-data/Brunel-
pubs.organisational-data/Brunel/Brunel Active Staff-
pubs.organisational-data/Brunel/Brunel Active Staff/Wolfson Centre-
pubs.organisational-data/Brunel/Brunel Active Staff/Wolfson Centre/Wolfson-
Appears in Collections:Materials Engineering
Wolfson Centre for Materials Processing

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