Please use this identifier to cite or link to this item: http://buratest.brunel.ac.uk/handle/2438/7701
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dc.contributor.authorChaure, NB-
dc.contributor.authorPal, C-
dc.contributor.authorBarard, S-
dc.contributor.authorKreouzis, K-
dc.contributor.authorRay, AK-
dc.contributor.authorCammidge, AN-
dc.contributor.authorChambrier, I-
dc.contributor.authorCook, MJ-
dc.contributor.authorMurphy, CE-
dc.contributor.authorCain, MG-
dc.date.accessioned2013-11-20T15:32:40Z-
dc.date.available2013-11-20T15:32:40Z-
dc.date.issued2012-
dc.identifier.citationJournal of materials chemistry, 22, 19179 - 19189, 2012en_US
dc.identifier.issn0959-9428-
dc.identifier.urihttp://bura.brunel.ac.uk/handle/2438/7701-
dc.descriptionThis journal is © The Royal Society of Chemistry 2012en_US
dc.description.abstractBottom-gate, bottom-contact organic thin film transistors (OTFTs) were fabricated using solvent soluble copper 1,4,8,11,15,18,22,25-octakis(hexyl)phthalocyanine as the active semiconductor layer. The compound was deposited as 70 nm thick spin-coated films onto gold source–drain electrodes supported on octadecyltrichlorosilane treated 250 nm thick SiO2 gate insulators. The performance of the OTFTs was optimised by investigating the effects of vacuum annealing of the films at temperatures between 50 0C and 200 0C, a range that included the thermotropic mesophase of the bulk material. These effects were monitored by ultraviolet-visible absorption spectroscopy, atomic force microscopy and XRD measurements. Device performance was shown to be dependent upon the annealing temperature due to structural changes of the film. Devices heat treated at 100 0C under vacuum (≥10-7 mbar) were found to exhibit the highest field-effect mobility, 0.7 cm2 V^-1 s^-1, with an on–off current modulation ratio of~107, a reduced threshold voltage of 2.0 V and a sub-threshold swing of 1.11 V per decade.en_US
dc.description.sponsorshipUK Technology Strategy Board (Project no: TP/6/EPH/6/S/K2536J) and UK National Measurement System (Project IRD C02 ‘‘Plastic Electronics’’, 2008–2011).en_US
dc.language.isoenen_US
dc.publisherRoyal Society of Chemistryen_US
dc.titleA liquid crystalline copper phthalocyanine derivative for high performance organic thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doihttp://dx.doi.org/10.1039/c2jm33301e-
pubs.organisational-data/Brunel-
pubs.organisational-data/Brunel/Brunel Active Staff-
pubs.organisational-data/Brunel/Brunel Active Staff/Wolfson Centre-
pubs.organisational-data/Brunel/Brunel Active Staff/Wolfson Centre/Wolfson-
Appears in Collections:Materials Engineering
Wolfson Centre for Materials Processing

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