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dc.contributor.authorAmbrosi, RM-
dc.contributor.authorShort, A-
dc.contributor.authorAbbey, AF-
dc.contributor.authorWells, A-
dc.contributor.authorSmith, D-
dc.identifier.citationNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 482(3): 644-652en
dc.description.abstractThe effect of non-ionising energy loss(NIEL) of protons in charge-coupled devices is to displace silicon atoms and any dopant materials present from their lattice positions to form lattice defects which in turn can trap electrons [1]. A CCD operating as a photon counter for x-ray spectroscopy relies on the efficient transfer of charge from one region to another. The number of defects produced will reduce the charge transfer efficiency (CTE) and hence degrade the spectral resolution of the energy distribution of interest [2]. The Swift X-ray Telescope will be equipped with a single EPIC MOS CCD22 as developed for the XMM project [3]. It is the aim of this study to determine the effect of the radiation environment on the performance of the CCD and its impact on the scientific objective of the x-ray telescope, to probe the x-ray afterglow of Gamma Ray Bursts (GRBs).en
dc.subjectCharge-coupled deviceen
dc.subjectRadiation damageen
dc.subjectX-ray spectroscopyen
dc.subjectEnergy resolutionen
dc.titleThe effect of proton damage on the X-ray spectral response of MOS CCDs for the swift X-ray telescopeen
dc.typeResearch Paperen
Appears in Collections:Electronic and Computer Engineering
Dept of Electronic and Computer Engineering Research Papers

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