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dc.contributor.authorGlot, AB-
dc.contributor.authorMazurik, SV-
dc.contributor.authorJones, BJ-
dc.contributor.authorBondarchuk, AN-
dc.contributor.authorBulpett, R-
dc.contributor.authorVerma, N-
dc.identifier.citationJournal of the European Ceramic Society. 30 (2010) 539–544en
dc.description.abstractIndium oxide based ceramics with bismuth oxide addition were sintered in air in the temperature range 800-1300 ºC. Current-voltage characteristics of In2O3-Bi2O3 ceramics sintered at different temperatures are weakly nonlinear. After an additional heat treatment in air at about 200 ºC samples sintered at a temperature within the narrow range of about 1050-1100 ºC exhibit a current-limiting effect accompanied by low-frequency current oscillations. It is shown that the observed electrical properties are controlled by the grain-boundary barriers and the heat treatment in air at 200 ºC leads to the decrease in the barrier height. Electrical measurements, scanning electron microscopy and X-ray photoelectron spectroscopy results suggest that the current-limiting effect observed in In2O3-Bi2O3 may be explained in terms of a modified barrier model; the observed current-limiting effect is the result of an increase of barrier height with increasing electric field, due to additional oxygen absorption. It is found that In2O3-Bi2O3-Co3O4-Cr2O3 ceramic exhibits current-voltage characteristics with negative differential resistance due to Joule micro heating.en
dc.description.sponsorshipThis study was performed in part in the frames of the project SEP-2003-C02-42821, CONACYT, México. Funding from the Royal Society, United Kingdom (2007R1/R26999) is gratefully acknowledged.en
dc.relation.ispartofExperimental Techniques Centre (ETC)-
dc.subjectGrain boundariesen
dc.subjectElectrical propertiesen
dc.subjectIndium oxideen
dc.subjectBismuth oxideen
dc.titleCurrent limiting and negative differential resistance in indium oxide based ceramicsen
dc.typeResearch Paperen
Appears in Collections:Materials Engineering
The Experimental Techniques Centre

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