Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorGlot, AB-
dc.contributor.authorMazurik, SV-
dc.contributor.authorJones, BJ-
dc.contributor.authorBondarchuk, AN-
dc.contributor.authorBulpett, R-
dc.contributor.authorVerma, N-
dc.identifier.citation11th International Conference on Electroceramics. University of Manchester, Manchester, the UK, Sep 2008.en
dc.description.abstractIndium oxide based ceramics with bismuth oxide addition were sintered in air in the temperature range 800-1300 ºC. Current-voltage characteristics of In2O3-Bi2O3 ceramics sintered at different temperatures are weakly nonlinear. After an additional heat treatment in air at about 200 ºC samples sintered at a temperature within the narrow range of about 1050-1100 ºC exhibit a current-limiting effect accompanied by low-frequency current oscillations. It is shown that the observed electrical properties are controlled by the grain-boundary barriers and the heat treatment in air at 200 ºC leads to the decrease in the barrier height. Electrical measurements, scanning electron microscopy and X-ray photoelectron spectroscopy results suggest that the current-limiting effect observed in In2O3-Bi2O3 can be explained in terms of the modified barrier model proposed earlier for the explanation of similar effect in In2O3-SrO ceramics.en
dc.format.extent563609 bytes-
dc.publisherUniversity of Manchesteren
dc.relation.ispartofExperimental Techniques Centre (ETC);-
dc.subjectIndium oxideen
dc.subjectElectrical propertiesen
dc.subjectGrain boundariesen
dc.subjectHeat treatementen
dc.subjectNon-ohmic conductivityen
dc.titleEffect of sintering temperature and heat treatment on electrical properties of indium oxide based ceramicsen
dc.typeConference Paperen
Appears in Collections:Materials Engineering
The Experimental Techniques Centre

Files in This Item:
File Description SizeFormat 
InGlot-BJJ-ProcECXI-17f-archive.pdf550.4 kBAdobe PDFView/Open

Items in BURA are protected by copyright, with all rights reserved, unless otherwise indicated.