Please use this identifier to cite or link to this item: http://buratest.brunel.ac.uk/handle/2438/14105
Title: Nanocathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si doping
Authors: Griffiths, JT
Zhang, S
Rouet-Leduc, B
Fu, WY
Bao, A
Zhu, D
Wallis, DJ
Howkins, A
Boyd, I
Stowe, D
Kappers, MJ
Humphreys, CJ
Oliver, RA
Keywords: Science & Technology;Physical Sciences;Technology;Chemistry, Multidisciplinary;Chemistry, Physical;Nanoscience & Nanotechnology;Materials Science, Multidisciplinary;Physics, Applied;Physics, Condensed Matter;Chemistry;Science & Technology - Other Topics;Materials Science;Physics;Nanocathodoluminescence;scanning transmission electron microscopy;InGaN optoelectronics;light emitting diodes;quantum confined Stark effect;silicon doping;OPTICAL-PROPERTIES;SPATIAL-RESOLUTION;DIFFUSION LENGTH;GAN;CATHODOLUMINESCENCE;HETEROSTRUCTURES;EFFICIENCY;SPECTRA
Issue Date: 2015
Publisher: American Chemical Society
Citation: NANO LETTERS, 2015, 15 (11), pp. 7639 - 7643 (5)
Abstract: Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices.
URI: http://bura.brunel.ac.uk/handle/2438/14105
DOI: http://dx.doi.org/10.1021/acs.nanolett.5b03531
ISSN: http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000364725400070&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=f12c8c83318cf2733e615e54d9ed7ad5
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1530-6984
1530-6992
Appears in Collections:The Experimental Techniques Centre

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