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dc.contributor.authorAdam, W-
dc.contributor.authorBergauer, T-
dc.contributor.authorDragicevic, M-
dc.contributor.authorFriedl, M-
dc.contributor.authorFruehwirth, R-
dc.contributor.authorHoch, M-
dc.contributor.authorHrubec, J-
dc.contributor.authorKrammer, M-
dc.contributor.authorTreberspurg, W-
dc.contributor.authorWaltenberger, W-
dc.contributor.authorAlderweireldt, S-
dc.contributor.authorBeaumont, W-
dc.contributor.authorJanssen, X-
dc.contributor.authorLuyckx, S-
dc.contributor.authorVan Mechelen, P-
dc.contributor.authorVan Remortel, N-
dc.contributor.authorVan Spilbeeck, A-
dc.contributor.authorBarria, P-
dc.contributor.authorCaillol, C-
dc.contributor.authorClerbaux, B-
dc.contributor.authorDe Lentdecker, G-
dc.contributor.authorDobur, D-
dc.contributor.authorFavart, L-
dc.contributor.authorGrebenyuk, A-
dc.contributor.authorLenzi, T-
dc.contributor.authorLéonard, A-
dc.contributor.authorMaerschalk, T-
dc.contributor.authorMohammadi, A-
dc.contributor.authorPerniè, L-
dc.contributor.authorRandle-Conde, A-
dc.contributor.authorReis, T-
dc.contributor.authorSeva, T-
dc.contributor.authorThomas, L-
dc.contributor.authorVander Velde, C-
dc.contributor.authorVanlaer, P-
dc.contributor.authorWang, J-
dc.contributor.authorZenoni, F-
dc.contributor.authorAbu Zeid, S-
dc.contributor.authorBlekman, F-
dc.contributor.authorDe Bruyn, I-
dc.contributor.authorD'Hondt, J-
dc.contributor.authorDaci, N-
dc.contributor.authorDeroover, K-
dc.contributor.authorHeracleous, N-
dc.contributor.authorKeaveney, J-
dc.contributor.authorLowette, S-
dc.contributor.authorMoreels, L-
dc.contributor.authorOlbrechts, A-
dc.contributor.authorPython, Q-
dc.contributor.authorTavernier, S-
dc.contributor.authorVan Mulders, P-
dc.contributor.authorVan Onsem, G-
dc.contributor.authorVan Parijs, I-
dc.contributor.authorStrom, DA-
dc.contributor.authorBasegmez, S-
dc.contributor.authorBruno, G-
dc.contributor.authorCastello, R-
dc.contributor.authorCaudron, A-
dc.contributor.authorCeard, L-
dc.contributor.authorDe Callatay, B-
dc.contributor.authorDelaere, C-
dc.contributor.authorDu Pree, T-
dc.contributor.authorForthomme, L-
dc.contributor.authorGiammanco, A-
dc.contributor.authorHollar, J-
dc.contributor.authorJez, P-
dc.contributor.authorMichotte, D-
dc.contributor.authorNuttens, C-
dc.contributor.authorPerrini, L-
dc.contributor.authorPagano, D-
dc.contributor.authorQuertenmont, L-
dc.contributor.authorSelvaggi, M-
dc.contributor.authorVidal Marono, M-
dc.contributor.authorBeliy, N-
dc.contributor.authorCaebergs, T-
dc.contributor.authorDaubie, E-
dc.contributor.authorHammad, GH-
dc.contributor.authorHärkönen, J-
dc.contributor.authorLampén, T-
dc.contributor.authorLuukka, PR-
dc.contributor.authorMäenpää, T-
dc.contributor.authorPeltola, T-
dc.contributor.authorTuominen, E-
dc.contributor.authorTuovinen, E-
dc.contributor.authorEerola, P-
dc.contributor.authorTuuva, T-
dc.contributor.authorBeaulieu, G-
dc.contributor.authorBoudoul, G-
dc.contributor.authorCombaret, C-
dc.contributor.authorContardo, D-
dc.contributor.authorGallbit, G-
dc.contributor.authorLumb, N-
dc.contributor.authorMathez, H-
dc.contributor.authorMirabito, L-
dc.contributor.authorPerries, S-
dc.contributor.authorSabes, D-
dc.contributor.authorVander Donckt, M-
dc.contributor.authorVerdier, P-
dc.contributor.authorViret, S-
dc.contributor.authorZoccarato, Y-
dc.identifier.citationNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 803: pp. 100 - 112, (2015)en_US
dc.description.abstractThe response of n+p silicon strip sensors to electrons from a 90Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the 90Sr source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy(SiO2)/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 °C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO2 by the radiation from the β source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n+p strip sensors is discussed.en_US
dc.format.extent100 - 112-
dc.subjectSilicon strip sensorsen_US
dc.subjectCharge collectionen_US
dc.subjectRadiation damageen_US
dc.subjectSurface damageen_US
dc.titleImpact of low-dose electron irradiation on n+p silicon strip sensorsen_US
dc.contributor.sponsorThe European Commission under the FP7 Research Infrastructures project AIDA, grant agreement no. 262025.-
dc.relation.isPartOfNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment-
Appears in Collections:Dept of Electronic and Computer Engineering Research Papers

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