Please use this identifier to cite or link to this item: http://buratest.brunel.ac.uk/handle/2438/8114
Title: High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors
Authors: Chaure, NB
Cammidge, AN
Chambrier, I
Cook, MJ
Cain, MG
Murphy, CE
Pal, C
Ray, AK
Keywords: Substituted copper phthalocyanine;Organic thin film transistor;Surface treatment;AFM;Topology;Field effect mobility
Issue Date: 2011
Publisher: National Institute for Materials Science
Citation: Science and Technology of Advanced Materials, 12(2), Article 025001, 2011
Abstract: Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10−2 cm2 V−1 s−1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3V for untreated devices to −2V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.
Description: © 2011 National Institute for Materials Science
URI: http://iopscience.iop.org/1468-6996/12/2/025001
http://bura.brunel.ac.uk/handle/2438/8114
DOI: http://dx.doi.org/10.1088/1468-6996/12/2/025001
ISSN: 1468-6996
Appears in Collections:Materials Engineering
Wolfson Centre for Materials Processing

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