Please use this identifier to cite or link to this item: http://buratest.brunel.ac.uk/handle/2438/7398
Title: Simulation of neutron radiation effects in silicon avalanche photodiodes
Authors: Osborne, Mark David
Advisors: Hobson, PR
Watts, S
Issue Date: 2000
Publisher: Brunel University School of Engineering and Design PhD Theses
Abstract: A new one-dimensional device simulation package developed for the simulation of neutron radiatiol! effects in silicon avalanche photodiodes is described. The software uses a finite difference technique to solve the time-independent semiconductor equations across a user specified structure. Impact ionisation and illumination are included, allowing accurate simulation with minimal assumptions about the device under investigation. The effect of neutron radiation damage is incorporated via the introduction of deep acceptor levels subject to Shockley-Read-Hall statistics. Two models are presented. A reverse reach through model, based on the EG&G C30626E reverse reach through avalanche photo diode originally proposed for use in the CMS electromagnetic calorimeter, and a reach through model, based on widely available commerical devices. A short experimental study on two commercial silicon avalanche photodiodes, a C30719F reverse reach through APD and a C30916E reach through APD, is presented for comparison with the simulation data. To allow full comparison with the simulated predictions, the commercial devices were irradiated at the Rutherford Appleton Laboratory's ISIS facility. The simulated data shows good qualitative agreement with the measurements performed on the commercial devices, quantitative predictions would require exact information about the doping profile. The characteristic behaviour of the devices is predicted over a wide range of conditions both before and after neutron irradiation. The effect of ionised deep acceptors in the bulk of the devices is investigated. The simulation package provides a useful tool for the analysis of semiconductor devices, particularly in areas where a non-ionising radiation damage is prevelent e.g. high energy physics, and provides a good basis for further development.
Description: This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.
URI: http://bura.brunel.ac.uk/handle/2438/7398
Appears in Collections:Electronic and Computer Engineering
Dept of Electronic and Computer Engineering Theses

Files in This Item:
File Description SizeFormat 
FulltextThesis.pdf6.72 MBAdobe PDFView/Open


Items in BURA are protected by copyright, with all rights reserved, unless otherwise indicated.