Please use this identifier to cite or link to this item: http://buratest.brunel.ac.uk/handle/2438/2446
Title: Numerical simulation of neutron radiation effects in avalanche photodiodes
Authors: Osborne, M
Hobson, PR
Watts, SJ
Keywords: Avalanche photodiodes;Numerical analysis;Neutron radiation effects
Issue Date: 2000
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices. 47(3): 529 - 536
Abstract: A new one-dimensional (1-D) device model developed for the simulation of neutron radiation effects in silicon avalanche photodiodes is described. The model uses a finite difference technique to solve the time-independent semiconductor equations across a user specified structure. The model includes impact ionization and illumination allowing accurate simulation with minimal assumptions. The effect of neutron radiation damage is incorporated via the introduction of deep acceptor levels subject to Shockley-Read-Hall statistics. Preliminary analysis of an EG&G reverse APD structure is compared with experimental data from a commercial EG&G C30719F APD.
URI: http://bura.brunel.ac.uk/handle/2438/2446
DOI: http://dx.doi.org/10.1109/16.824722
ISSN: 0018-9383
Appears in Collections:Electronic and Computer Engineering
Dept of Electronic and Computer Engineering Research Papers

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